Method and apparatus for semiconductor wafer planarization

ABSTRACT

Broadly speaking, the present invention provides a method and an apparatus for planarizing a semiconductor wafer (“wafer”). More specifically, the present invention provides for depositing a planarizing layer over the wafer, wherein the planarizing layer serves to fill recessed areas present on a surface of the wafer. A planar member is positioned over and proximate to a top surface of the wafer. Positioning of the planar member serves to entrap electroless plating solution between the planar member and the wafer surface. Radiant energy is applied to the wafer surface to cause a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase in turn causes plating reactions to occur at the wafer surface. Material deposited through the plating reactions forms a planarizing layer that conforms to a planarity of the planar member.

CLAIM OF PRIORITY

This application is a divisional application of U.S. patent applicationSer. No. 10/734,704, filed on Dec. 12, 2003, now U.S. Pat. No. 7,368,017the disclosure of which is incorporated in its entirety herein byreference.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is related to U.S. patent application Ser. No.10/735,216, filed on Dec. 12, 2003, and entitled “Method and Apparatusfor Material Deposition.” The disclosure of this related application isincorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to semiconductor fabrication.More specifically, the present invention relates to material depositionand associated planarization on a semiconductor wafer.

2. Description of the Related Art

In the fabrication of semiconductor devices such as integrated circuits,memory cells, and the like, a series of manufacturing operations areperformed to define features on semiconductor wafers. The semiconductorwafers include integrated circuit devices in the form of multi-levelstructures defined on a silicon substrate. At a substrate level,transistor devices with diffusion regions are formed. In subsequentlevels, interconnect metallization lines are patterned and electricallyconnected to the transistor devices to define a desired integratedcircuit device. Also, patterned conductive layers are insulated fromother conductive layers by dielectric materials.

The series of manufacturing operations for defining features on thesemiconductor wafers can include many processes such as adding,patterning, etching, removing, polishing, and planarizing among others,various material layers. Due to the intricate nature of the featuresdefined on the semiconductor wafers, it is necessary to perform eachprocess in a precise manner. For example, it is often desirable toplanarize a surface of the wafer in a precise manner to decreasevariations in a surface topography of the wafer. Without preciseplanarization, fabrication of additional metallization layers becomessubstantially more difficult due to increased variations in the surfacetopography of the wafer.

A chemical mechanical planarization (CMP) process is one method forperforming wafer planarization. In general, the CMP process involvesholding and contacting a rotating wafer against a moving polishing padunder a controlled pressure. CMP systems typically configure thepolishing pad on a rotary table or a linear belt. Additionally, a slurryis disposed to be present an interface between the wafer and thepolishing pad to facilitate and enhance the CMP process.

While the CMP process is quite capable and useful for providing waferplanarization, there is an ever present desire to continue researchingand developing alternative techniques for performing waferplanarization. In view of the foregoing, there is a need for anapparatus and a method to planarize a wafer that can be implementedeither as an alternative or as a complement to the traditional CMPprocess.

SUMMARY OF THE INVENTION

Broadly speaking, a method and an apparatus are provided for planarizinga semiconductor wafer (“wafer”). More specifically, the presentinvention provides a method and apparatus for depositing a planarizinglayer over the wafer, wherein the planarizing layer serves to fillrecessed areas present on a surface of the wafer. In accordance with thepresent invention, a planar member is positioned over and proximate to atop surface of the wafer. The positioning of the planar member serves toentrap electroless plating solution between the planar member and thewafer surface such that the recessed areas present on the wafer surfaceare filled with electroless plating solution. Radiant energy is thenapplied to the wafer surface to selectively heat a material present onthe wafer surface. The selective heating of the wafer surface causes atemperature increase at an interface between the wafer surface and theelectroless plating solution. The temperature increase in turn causesplating reactions to occur at the wafer surface. Reactants presentwithin the electroless plating solution between the planar member andthe wafer surface are consumed through continued application of theradiant energy. The planar member is then moved away from the wafer toallow fresh electroless plating solution to be interspersed between theplanar member and the wafer. Then, the planar member is repositioned andthe radiant energy is reapplied. Eventually, the material depositedthrough the plating reactions forms a planarization layer that conformsto a planarity of the planar member.

In one embodiment, an apparatus for depositing a planarizing layer overa wafer is disclosed. The apparatus includes a tank defined by a bottomand an enclosing wall. The tank is configured to contain an electrolessplating solution. The apparatus also includes a wafer support structuredisposed within the tank. The wafer support structure is configured tosupport the wafer at a submerged position within the electroless platingsolution to be contained within the tank. The apparatus further includesa planar member disposed above and substantially parallel to the wafersupport structure. The planar member is movable in directions bothtoward and away from the wafer support structure. The planar member isalso capable of being positioned proximate to the wafer when supportedby the wafer support structure. Additionally, the apparatus includes aradiant energy source disposed above the planar member and above thewafer support structure. The radiant energy source is oriented to directradiant energy through the planar member and to the wafer when supportedby the wafer support structure.

In another embodiment, a method for applying a planarizing layer on asurface of a wafer is disclosed. The method includes an operation forapplying an electroless plating solution to the wafer surface. Theelectroless plating solution is maintained at a temperature at which aplating reaction does not readily occur. The method also includespositioning a planar member over and proximate to a top portion of thewafer surface. The planar member serves to expel a portion ofelectroless plating solution interposed between the planar member andthe wafer surface. The method further includes exposing the wafersurface to radiant energy by passing the radiant energy through theplanar member. The radiant energy is capable of increasing a temperatureof the wafer surface to a state at which the plating reaction occurs atan interface between the electroless plating solution and the wafersurface. The plating reaction forms a planarizing layer between thewafer surface and the planar member.

In another embodiment, another method for applying a planarizing layeron a surface of a wafer is disclosed. In the method, an electrolessplating solution is applied to the wafer surface. The electrolessplating solution is maintained at a temperature at which a platingreaction does not readily occur. A planar member is then moved over andproximate to a top portion of the wafer surface. The planar memberserves to expel a portion of electroless plating solution interposedbetween the planar member and the wafer surface. Radiant energy is thenapplied through the planar member to the wafer surface. The radiantenergy is capable of increasing a temperature of the wafer surface to astate at which the plating reaction will occur at an interface betweenthe electroless plating solution and the wafer surface. A wavelengthrange of the radiant energy is controlled such that the radiant energyselectively heats a material present at the wafer surface. Reactantspresent in a remaining amount of electroless plating solution interposedbetween the planar member and the wafer surface are allowed to beconsumed in plating reactions. Application of the radiant energy to thewafer surface is then discontinued. The planar member is moved away fromthe top portion of the wafer surface to allow fresh electroless platingsolution to be introduced between the planar member and the wafersurface. Planarization of the wafer surface is approached byrepetitively performing the aforementioned sequence of operations.

Other aspects and advantages of the invention will become more apparentfrom the following detailed description, taken in conjunction with theaccompanying drawings, illustrating by way of example the presentinvention.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention, together with further advantages thereof, may best beunderstood by reference to the following description taken inconjunction with the accompanying drawings in which:

FIG. 1 is an illustration showing an apparatus for depositing aplanarizing layer over a wafer, in accordance with one embodiment of thepresent invention;

FIGS. 2A through 2I represent a sequence of illustrations showing aplanarization process performed by depositing a planarizing layer over awafer, in accordance with one embodiment of the present invention;

FIG. 3 is an illustration showing a flowchart of a method for applying aplanarizing layer on a surface of a wafer, in accordance with oneembodiment of the present invention; and

FIG. 4 is an illustration showing a flowchart of another method forapplying a planarizing layer on a surface of a wafer, in accordance withone embodiment of the present invention.

DETAILED DESCRIPTION

Broadly speaking, a method and an apparatus are provided for planarizinga semiconductor wafer (“wafer”). More specifically, the presentinvention provides a method and an apparatus for depositing aplanarizing layer over the wafer, wherein the planarizing layer servesto fill recessed areas present on a surface of the wafer. In accordancewith the present invention, a planar member is positioned over andproximate to a top surface of the wafer. The positioning of the planarmember serves to entrap electroless plating solution between the planarmember and the wafer surface such that the recessed areas present on thewafer surface are filled with electroless plating solution. Radiantenergy is then applied to the wafer surface to selectively heat amaterial present on the wafer surface. The selective heating of thewafer surface causes a temperature increase at an interface between thewafer surface and the electroless plating solution. The temperatureincrease in turn causes plating reactions to occur at the wafer surface.Reactants present within the electroless plating solution between theplanar member and the wafer surface are consumed through continuedapplication of the radiant energy. The planar member is then moved awayfrom the wafer to allow fresh electroless plating solution to beinterspersed between the planar member and the wafer. Then, the planarmember is repositioned and the radiant energy is reapplied. Eventually,the material deposited through the plating reactions forms a planarizinglayer that conforms to a planarity of the planar member.

In the following description, numerous specific details are set forth inorder to provide a thorough understanding of the present invention. Itwill be apparent, however, to one skilled in the art that the presentinvention may be practiced without some or all of these specificdetails. In other instances, well known process operations have not beendescribed in detail in order not to unnecessarily obscure the presentinvention.

FIG. 1 is an illustration showing an apparatus for depositing aplanarizing layer over a wafer, in accordance with one embodiment of thepresent invention. The apparatus includes a tank 101 defined by anenclosing wall and a bottom. The tank 101 is configured to contain anelectroless plating solution 103. The present invention can beimplemented using suitable and commonly available electroless platingsolutions, such as Cuposit250, manufactured by Shipley Company.Alternatively, a customized electroless plating solution can bedeveloped for use with the present invention. It is preferable, however,that the electroless plating solution 103 be defined to react atmoderate to higher temperatures. For example, in one embodiment, theelectroless plating solution 103 will not react at temperatures belowabout 40° C.

In one embodiment, an inlet 113 is provided for supplying theelectroless plating solution 103 to the tank 101, and an outlet 115 isprovided for removing the electroless plating solution 103 from the tank101. Thus, the inlet 113 and the outlet 115 can be used to control aflow of the electroless plating solution 103 through the tank 101. Inone embodiment, the electroless plating solution 103 can be periodicallyreplenished. In another embodiment, a continuous flow of the electrolessplating solution 103 through the tank 101 can be provided. It shouldalso be appreciated that baffles and other flow diverting mechanisms canbe disposed within the tank 101 to provide a desired directionality anduniformity to the flow of electroless plating solution 103 through thetank 101. Furthermore, in one embodiment, a heat exchanger 117 can beimplemented within the tank 101 to maintain a temperature of theelectroless plating solution 103 within the tank 101. In anotherembodiment, the heat exchanger 117 can be implemented outside of thetank 101 to maintain the temperature of the electroless plating solution103 entering the tank 101. In one embodiment, the heat exchanger 117 isrepresented as a coil over which the electroless plating solution 103 isflowed. However, it should be appreciated that any other type of heatexchanger 117 suitable for affecting the temperature of the electrolessplating solution 103 can be implemented with the present invention.Preferably, the electroless plating solution 103 is maintained at asubstantially low temperature. For example, in one embodiment, theelectroless plating solution 103 is maintained at a temperature belowabout 15° C., wherein a lower bound of the electroless plating solution103 temperature is limited by solubility.

The apparatus of FIG. 1 also includes a wafer support structure 105disposed within the tank 101 to support a wafer 107 at a submergedposition within the electroless plating solution 103. In one embodiment,the wafer support structure 105 is defined to provide substantiallycomplete contact with a bottom surface of the wafer 107. However, inother embodiments, the wafer support structure 105 can be defined toprovide partial contact with the bottom surface of the wafer 107. In oneembodiment, the wafer support structure 105 can include a number oflifting pins configured to contact the bottom of the wafer 107. Thenumber of lifting pins can be actuated to raise and lower the wafer 107with respect to the wafer support structure 105, thus facilitatingtransport of the wafer 107 to and from the wafer support structure 105.Regardless of the specific wafer support structure 105 embodiment, thewafer support structure 105 is configured to securely hold the wafer 107during a wafer planarization process. Additionally, the wafer supportstructure 105 is preferably configured to support the wafer 107 in anorientation that minimizes a potential for entrapment of gas bubblesthat may evolve from electroless plating reactions.

The apparatus of FIG. 1 also includes a planar member 119 disposed aboveand substantially parallel to the wafer support structure 105. In oneembodiment, the planar member is secured to vertically oriented supportmembers 121. The support members 121 maintain the planar member 119 inthe orientation substantially parallel to the wafer support structure105. The support members 121 also provide a mechanism for moving theplanar member 119 in directions toward and away from the wafer supportstructure 105, as indicated by arrows 123. Though vertically orientedsupport members 121 have been used to facilitate description of thepresent invention, it should be appreciated that many other supportmember configurations and orientations can be implemented to provide thenecessary support and orientation control to the planar member 119. Forexample, in one embodiment, the planar member 119 can be secured to ahorizontal support ring having linkage to a vertical translation device.Regardless of the specific embodiment, the support members 121 should becapable of moving the planar member 119 vertically and maintaining theplanar member 119 in the orientation substantially parallel to the wafersupport structure 105.

Prior to completing the wafer planarization process, a surface of thewafer 107 facing the planar member 119 will have a topography defined bya number of upper surface areas separated by lower surface areas. Fordiscussion purposes, the upper surfaces areas are referred to as“peaks”, and the lower surfaces areas are referred to as “trenches.” Thevertical movement of the planar member 119 is controlled in a precisemanner to allow the planar member 119 to be positioned proximate to thewafer 107 to be supported by the wafer support structure 105. In oneembodiment, positioning the planar member 119 proximate to the wafer 107corresponds to positioning the planar member 119 at a distance within arange extending from about 0 micrometers to about 3 micrometers from atop surface of the wafer 107, wherein the top surface of the wafer 107corresponds to a highest peak present on the surface of the wafer 107facing the planar member 119. Values greater than 0 are encountered dueto total thickness variation (waviness, warpage, nanotopography and filmthickness variations, and topography of the features to be planarized).

During the planarization process, the planar member 119 is positionedproximate to the wafer 107. A surface of the planar member 119 facingthe wafer 107 (“planarizing surface”) will define the planarityachievable during the planarization process. Thus, the planarizingsurface is carefully configured to represent the desired planarity to beapplied to the wafer 107. In one embodiment, the planar member 119 iscomposed of a material that provides for local area rigidity and broadarea flexibility. In other words, the planar member 119 of thisembodiment is broadly flexible and locally rigid. Also, in conjunctionwith this embodiment, a backing member can be disposed against abackside of the planar member 119, wherein the backside is opposite theplanarizing surface. The backing member is configured to control aplanarity of the planarizing surface by applying a differential pressuredistribution through the planar member 119 to the planarizing surface.In various embodiments, the backing member may implement fluid filledchambers or a distribution of materials having varying spring constantsto achieve a desired differential pressure distribution. Furthermore, inanother embodiment, the planarizing surface is rigid throughout. Invarious embodiments, the planar member 119 is formed from either quartz,sapphire, or polymer. It should be appreciated, however, that the planarmember 119 can also be formed from a variety of other materials thatoffer acceptable planarity and rigidity properties. Additionally, theplanar member 119 material should be capable of transmitting radiantenergy 111 emitted from a radiant energy source 109 toward the wafersupport structure 105.

As indicated above, the apparatus of FIG. 1 further includes the radiantenergy source 109 disposed above both the planar member 119 and thewafer support structure 105. The radiant energy source 109 is orientedto direct radiant energy 111 through the planar member 119 and to thewafer 107 supported by the wafer support structure 105 at the submergedposition within the electroless plating solution 103. The radiant energysource 109 is configured to generate radiant energy 111 having awavelength range that is capable of selectively heating a materialpresent at the surface of the wafer 107 facing the planar member 119(i.e., a material upon which the radiant energy 111 will be incident).For purposes of discussion, the radiant energy 111 is characterized interms of wavelength. However, it should be understood that the radiantenergy 111 can be equivalently characterized in terms of frequency. Forexample, if the surface of the wafer 107 is defined by a material “X”,the radiant energy 111 is defined to have a wavelength range that willbe absorbed by the atoms/molecules of material “X” to increaseexcitation of the atoms/molecules of material “X”. The increasedexcitation of the atoms/molecules of material “X” will result in aheating and increased temperature of the material “X”. Preferably, thewavelength range of radiant energy 111 necessary to excite the material“X” atoms/molecules will cause zero or limited excitation ofatoms/molecules in surrounding materials. Some immediately surroundingmaterials include different wafer 107 materials that are underlying oradjacent to material “X” and a bulk volume of the electroless platingsolution 103. Thus, the radiant energy 111 generated by the radiantenergy source 109 is configured to selectively heat a specific materialpresent at the surface of the wafer 107. For example, to selectivelyheat Cu present on the surface of the wafer 107, the radiant energy maybe defined to have a wavelength of about 250 nanometers.

In one embodiment, the electroless plating solution 103 is maintained ata sufficiently low temperature at which an electroless plating reactionwill not occur. Thus, immersion of the wafer 107 into the electrolessplating solution 103 is not sufficient to cause material deposition tooccur on the wafer 107 surface through electroless plating reactions.However, selective heating of a particular material present on the wafer107 surface through application of the radiant energy 111 will increasethe temperature of the particular material to a point at whichelectroless plating reactions will occur. Since the particular materialis selectively heated by the radiant energy 111, the electroless platingreactions will occur at the interface between the particular materialand the electroless plating solution 103. With the planar member 119positioned proximate to the wafer 107, the planarizing surface of theplanar member 119 will serve as an upper confinement boundary formaterial deposited through electroless plating reactions on the wafer107. Thus, the material deposited through electroless plating reactionson the wafer 107 will define the planarizing layer over the wafer 107,with the planarity of the planarizing layer being defined by theplanarity of the planarizing surface.

It should also be appreciated that an increase in radiant energy 111intensity will result in an increased temperature of the particularmaterial excited by the radiant energy, with a corresponding increase inelectroless plating reaction rate. Thus, with the apparatus of FIG. 1, aplanarizing layer can be deposited over the wafer 107 throughelectroless plating reactions that are initiated and controlled byvarying the temperature of the particular material on the wafer 107surface using appropriately defined and controlled radiant energy 111.

Preferably, the radiant energy source 109 is configured to apply asubstantially uniform amount of radiant energy 111 over the surface ofthe wafer 107. In one embodiment, the radiant energy source 109 isconfigured to maintain a stationary position during the planarizationprocess. However, the stationary radiant energy source 109 is capable ofuniformly applying radiant energy 111 over the top surface of the wafer107. It should be appreciated that a variety of radiant energy 111reflecting surfaces can be used in conjunction with the stationaryradiant energy source 109 to achieve uniform application of the radiantenergy 111 over the surface of the wafer 107. Also, in an alternativeembodiment, an array of radiant energy sources can be implemented touniformly apply the radiant energy 111 over the top surface of the wafer107. Furthermore, various types of monitoring equipment commonly used inthe wafer fabrication process to collect data associated with a surfacecondition of the wafer can be implemented with the apparatus of FIG. 1.Data obtained from the monitoring equipment can be used as feedback tocontrol the radiant energy source 109.

FIGS. 2A through 2I represent a sequence of illustrations showing aplanarization process performed by depositing a planarizing layer over awafer, in accordance with one embodiment of the present invention. Eachof FIGS. 2A through 2I represent a cross-section view of a portion ofthe wafer 107 and a corresponding portion of the planar member 119during various stages of the planarization process. With respect to FIG.2A, the planarization process begins by positioning the planar member119 away from the wafer 107 to allow the electroless plating solution103 to be interspersed between the planar member 119 and the wafer 107.The electroless plating solution 103 is maintained at a sufficiently lowtemperature at which electroless plating reactions will not readilyoccur. In one embodiment, as previously discussed with respect to FIG.1, the wafer 107 is disposed on a wafer support structure at a submergedposition within a bath of electroless plating solution 103. Also, asshown in FIG. 2A, prior to performing the planarization process, thewafer 107 has a surface topography defined by a number of peaks 203 andtrenches 205.

With respect to FIG. 2B, the planar member 119 is positioned proximateto the top surface of the wafer 107, wherein the top surface of thewafer 107 is defined by the highest peak present on the surface of thewafer 107. The planar member 119 is also oriented to be substantiallyparallel to the wafer support structure upon which the wafer isdisposed. As the planar member 119 is moved toward the wafer 107,electroless plating solution interposed between the planar member 119and the wafer 107 is expelled, leaving electroless plating solutionwithin the trenches of the wafer 107 surface. Also, since the planarmember 119 is proximate to the top surface of the wafer 107, a minuteamount of electroless plating solution may be present between the planarmember 119 and the top surface of the wafer 107. In one embodiment, theplanar member 119 is positioned as close to the top surface of the wafer107 as possible without causing damage to the wafer 107.

In FIG. 2C, the radiant energy 111 is transmitted through the planarmember 119 to the wafer 107. The radiant energy 111 is defined to have awavelength range that will selectively heat a material present at thesurface of the wafer 107 causing the temperature of the material toincrease to a state at which electroless plating reactions occur. In oneembodiment, the radiant energy 111 continues to be applied untilessentially all of the available reactants in the electroless platingsolution present between the planar member 119 and the wafer 107 areconsumed. In one embodiment, a time required to consume the availablereactants is within a range extending from about 0.01 second to about 10seconds. Also, the planarizing surface of the planar member 119 servesas an upper confinement boundary for material deposited throughelectroless plating reactions.

FIG. 2D represents a stage of the planarization process followingconsumption of essentially all of the available reactants in theelectroless plating solution present between the planar member 119 andthe wafer 107. Correspondingly, application of the radiant energy 111 isdiscontinued. At this stage, a portion of the planarizing layer 201 hasbeen deposited over the wafer 107. However, due to limitations onreactant concentrations within the electroless plating solution, asingle application of radiant energy 111 may not sufficient to fullyplanarize the wafer 107.

In FIG. 2E, the planar member 119 is moved away from the wafer 107 toallow fresh electroless plating solution 103 to be interspersed betweenthe planar member 119 and the wafer 107. In following, FIG. 2Frepresents another iteration of the planarization process in which theplanar member 119 is again positioned proximate to the top surface ofthe wafer 107. With respect to FIG. 2F, the top surface of the wafer 107is now defined by the portion of planarizing layer formed during theprevious application of radiant energy 111. The sequence of moving theplanar member 119 away from the wafer 107 followed by repositioning theplanar member 119 proximate to the wafer is referred to as refreshing.In one embodiment, the refreshing is performed quickly to minimize anamount of material deposition that occurs during the refreshing.

In FIG. 2G, the radiant energy 111 is again transmitted through theplanar member 119 to the wafer 107. The radiant energy 111 heats thematerial present at the surface of the wafer 107 to a temperature atwhich electroless plating reactions occur. The radiant energy 111 isapplied to allow essentially all of the available reactants in theelectroless plating solution present between the planar member 119 andthe wafer 107 to be consumed.

FIG. 2H represents completion of a final iteration of the planarizationprocess. As shown in FIG. 2I, the material deposited through electrolessplating reactions has filled the trenches present on the wafer 107surface and has formed a planarizing layer of material over the wafer107. Since, the planarizing surface of the planar member 119 serves asan upper confinement boundary for material deposited through electrolessplating reactions, the planarity of the planarizing layer deposited overthe wafer is defined by the planarizing surface. Furthermore, formationof the planarizing layer over the wafer 107 is self-limiting due tominimization of electroless plating solution between the planar member119 and the wafer 107 as the planarizing surface and the wafer 107surface approach co-planarity.

FIG. 3 is an illustration showing a flowchart of a method for applying aplanarizing layer on a surface of a wafer, in accordance with oneembodiment of the present invention. The method includes an operation310 in which an electroless plating solution is applied to a wafersurface. The electroless plating solution is maintained at a temperatureat which a plating reaction does not readily occur. In one embodiment,the electroless plating solution is applied to the wafer surface bysubmerging the wafer in a bath of electroless plating solution. Themethod also includes an operation 303 in which a planar member ispositioned over and proximate to a top portion of the wafer surface. Inone embodiment, the planar member is positioned within a range extendingfrom about 0 micrometers to about 3 micrometers from the top portion ofthe wafer surface. Positioning the planar member proximate to the wafersurface serves to expel a portion of electroless plating solutioninterposed between the planar member and the wafer surface.Additionally, positioning the planar member proximate to the wafersurface also serves to entrap a portion of the electroless platingsolution within recessed areas of the wafer surface.

The method further includes an operation 305 in which the wafer surfaceis exposed to radiant energy to increase a temperature of the wafersurface to a state at which plating reactions occur. To reach the wafersurface, the radiant energy passes through the planar member positionedover and proximate to the wafer surface. Due to the increase intemperature at the wafer surface, plating reactions occur at aninterface between the electroless plating solution and the wafersurface. The plating reactions result in formation of a planarizinglayer between the wafer surface and the planar member. In oneembodiment, exposure of the wafer surface to the radiant energycontinues until reactants contained within the electroless platingsolution adjacent to the wafer surface are consumed. Also, in oneembodiment, the wafer surface is exposed to the radiant energy in asubstantially uniform manner. Furthermore, a wavelength range of theradiant energy can be controlled to selectively heat a particularmaterial present at the wafer surface. Conditions at the wafer surfacecan be monitored to ensure that the wavelength range of the radiantenergy is established to selectively heat the particular materialpresent at the wafer surface.

In some instances, full consumption of reactants contained within theelectroless plating solution adjacent to the wafer surface is notsufficient to completely planarize the wafer surface. In theseinstances, operations 301 through 305 can be iteratively performed untila desired planarization of the wafer surface is achieved. For example,in one embodiment, exposure of the wafer surface to the radiant energyin operation 305 is ceased when a reactant concentration within theelectroless solution adjacent to the wafer surface reaches a specifiedlow level. Then, the planar member is removed from the positionproximate to the top portion of the wafer surface. Removal of the planarmember allows fresh electroless plating solution to flow over the wafersurface. The fresh electroless plating solution serves to quench thewafer surface and replenish reactants present in a vicinity of the wafersurface. Then, the operations 301 through 305 are repeated.

FIG. 4 is an illustration showing a flowchart of another method forapplying a planarizing layer on a surface of a wafer, in accordance withone embodiment of the present invention. The method includes anoperation 401 for applying an electroless plating solution to a wafersurface. The electroless plating solution is maintained at a temperatureat which a plating reaction does not readily occur. In one embodiment,applying the electroless plating solution to the wafer surface isperformed by submerging the wafer in a bath of the electroless platingsolution. The method also includes an operation 403 for moving a planarmember over and proximate to a top portion of the wafer surface.Movement of the planar member serves to expel a portion of electrolessplating solution interposed between the planar member and the wafersurface. Additionally, movement of the planar member serves to entrap aportion of the electroless plating solution within recessed areas of thewafer surface. An operation 405 is also provided for applying radiantenergy through the planar member and to the wafer surface. The radiantenergy is capable of increasing a temperature of the wafer surface to astate at which plating reactions will occur at an interface between theelectroless plating solution and the wafer surface. In an operation 407,a wavelength range of the radiant energy is controlled to cause theradiant energy to selectively heat a material present at the wafersurface. Furthermore, in an operation 409, reactants present in aremaining amount of electroless plating solution interposed between theplanar member and the wafer surface are allowed to be consumed inplating reactions. The method also includes an operation 411 fordiscontinuing application of the radiant energy to the wafer surface.Following the operation 411, an operation 413 is performed to move theplanar member away from the top portion of the wafer surface. Movementof the planar member away from the top portion of the wafer surfaceallows fresh electroless plating solution to be introduced between theplanar member and the wafer surface. The method further includes anoperation 415 in which operations 403 through 413 are repeated in acyclic manner such that the wafer surface approaches a planar condition.In one embodiment, a reactant concentration present in the freshelectroless plating solution is increased during each cycle tocompensate for a reduced volume to be occupied by the electrolessplating solution between the wafer surface and the planar memberpositioned proximate to the wafer surface.

While this invention has been described in terms of several embodiments,it will be appreciated that those skilled in the art upon reading thepreceding specifications and studying the drawings will realize variousalterations, additions, permutations and equivalents thereof. It istherefore intended that the present invention includes all suchalterations, additions, permutations, and equivalents as fall within thetrue spirit and scope of the invention.

1. A method for applying a planarizing layer on a surface of a wafer,comprising: applying an electroless plating solution to a wafer surface,the electroless plating solution being maintained at a temperature atwhich a plating reaction does not readily occur; positioning a planarmember over and proximate to a top portion of the wafer surface, theplanar member serving to expel a portion of electroless plating solutioninterposed between the planar member and the wafer surface, the planarmember serving as an upper confinement boundary for material depositedon the wafer through electroless plating reactions; and exposing thewafer surface to radiant energy, the radiant energy passing through theplanar member, the radiant energy being capable of increasing atemperature of the wafer surface to a state at which the platingreaction occurs at an interface between the electroless plating solutionand the wafer surface, the plating reaction forming a planarizing layerbetween the wafer surface and the planar member.
 2. A method forapplying a planarizing layer on a surface of a wafer as recited in claim1, wherein positioning the planar member serves to entrap a portion ofthe electroless plating solution within recessed areas of the wafersurface.
 3. A method for applying a planarizing layer on a surface of awafer as recited in claim 1, further comprising: controlling awavelength range of the radiant energy to cause the radiant energy toselectively heat a material present at the wafer surface.
 4. A methodfor applying a planarizing layer on a surface of a wafer as recited inclaim 3, further comprising: monitoring conditions at the wafer surfaceto ensure that the wavelength range of the radiant energy is establishedto selectively heat the material present at the wafer surface.
 5. Amethod for applying a planarizing layer on a surface of a wafer asrecited in claim 1, wherein the electroless plating solution is appliedto the wafer surface by submerging the wafer in a bath of theelectroless plating solution.
 6. A method for applying a planarizinglayer on a surface of a wafer as recited in claim 1, wherein exposingthe wafer surface to radiant energy continues until reactants containedwithin the electroless plating solution adjacent to the wafer surfaceare consumed.
 7. A method for applying a planarizing layer on a surfaceof a wafer as recited in claim 1, further comprising: ceasing exposingthe wafer surface to radiant energy; removing the planar member from theposition proximate to the top portion of the wafer surface, whereinremoving the planar member allows fresh electroless plating solution toflow over the wafer surface, the fresh electroless plating solutionserving to quench the wafer surface and replenish reactants present in avicinity of the wafer surface; and repeating the operations ofpositioning the planar member over and proximate to the top portion ofthe wafer surface and exposing the wafer surface to radiant energy.
 8. Amethod for applying a planarizing layer on a surface of a wafer asrecited in claim 1, wherein the wafer surface is exposed to the radiantenergy in a substantially uniform manner.
 9. A method for applying aplanarizing layer on a surface of a wafer, comprising: (a) applying anelectroless plating solution to a wafer surface, the electroless platingsolution being maintained at a temperature at which a plating reactiondoes not readily occur; (b) moving a planar member over and proximate toa top portion of the wafer surface, the planar member serving to expel aportion of electroless plating solution interposed between the planarmember and the wafer surface; (c) applying radiant energy through theplanar member and to the wafer surface, the radiant energy being capableof increasing a temperature of the wafer surface to a state at which theplating reaction occurs at an interface between the electroless platingsolution and the wafer surface; (d) controlling a wavelength range ofthe radiant energy to cause the radiant energy to selectively heat amaterial present at the wafer surface; (e) allowing reactants present ina remaining amount of electroless plating solution interposed betweenthe planar member and the wafer surface to be consumed in platingreactions; (f) discontinuing application of radiant energy to the wafersurface; (g) moving the planar member away from the top portion of thewafer surface to allow fresh electroless plating solution to beintroduced between the planar member and the wafer surface; and (h)repeating elements (b) through (g) to approach planarity of the wafersurface.
 10. A method for applying a planarizing layer on a surface of awafer as recited in claim 9, wherein applying the electroless platingsolution to the wafer surface is performed by submerging the wafer in abath of the electroless plating solution.
 11. A method for applying aplanarizing layer on a surface of a wafer as recited in claim 9, furthercomprising: controlling a flow of the electroless plating solutionthrough the bath so as to maintain replenished electroless platingsolution within the bath.
 12. A method for applying a planarizing layeron a surface of a wafer as recited in claim 9, further comprising:maintaining the electroless plating solution within the bath at atemperature at which a plating reaction does not readily occur.
 13. Amethod for applying a planarizing layer on a surface of a wafer asrecited in claim 9, wherein moving the planar member over and proximateto the top portion of the wafer surface serves to entrap a portion ofthe electroless plating solution within recessed areas of the wafersurface.
 14. A method for applying a planarizing layer on a surface of awafer as recited in claim 9, wherein the planar member serves as anupper confinement boundary for material deposited on the wafer throughelectroless plating reactions.
 15. A method for applying a planarizinglayer on a surface of a wafer as recited in claim 14, wherein the planarmember is defined to be broadly flexible and locally rigid.